PMZB200UNEYL

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Nexperia USA Inc.

MOSFET N-CH 30V 1.4A DFN1006B-3

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PMZB200UNEYL

Active

Nexperia USA Inc.

MOSFET N-CH 30V 1.4A DFN1006B-3

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMZB200 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB200UNEYL

Current - Continuous Drain (Id) (Ta)	1.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	2.7 nC, 2.7 nC
Input Capacitance (Ciss) (Max)	89 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-XFDFN
Package Name	DFN1006B-3
Power Dissipation (Max)	350 mW, 6.25 W
Rds On (Max)	250 mOhm, 250 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	950 mV

PMZB200 Series

30 V, N-channel Trench MOSFET

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Technology	FET Type	Rds On (Max)	Vgs(th) (Max)
Nexperia USA Inc. PMZB200UNEYL	30 V	8 V	3-XFDFN	DFN1006B-3	89 pF	6.25 W 350 mW	4.5 V	1.5 V	2.7 nC 2.7 nC	Surface Mount	-55 °C	150 °C	1.4 A	MOSFET (Metal Oxide)	N-Channel	250 mOhm 250 mOhm	950 mV