IRF9410PBF

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Infineon Technologies

MOSFET N-CH 30V 7A 8SO

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Unknown

Infineon Technologies

MOSFET N-CH 30V 7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9410PBF

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF9410PBF	30 V	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	30 mOhm	8-SO	20 V	Surface Mount	MOSFET (Metal Oxide)	27 nC	1 V	7 A	2.5 W	N-Channel	-55 °C	150 °C	550 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$