XP231N0201TR-G

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Torex Semiconductor Ltd

MOSFET N-CH 30V 200MA

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Torex Semiconductor Ltd

MOSFET N-CH 30V 200MA

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General part information

N-Channel 30 V 200mA (Ta) 400mW (Ta) Surface Mount SOT-23 (TO-236)

Technical documentation and resources

Specification	XP231N0201TR-G	XP231 Series

Current - Continuous Drain (Id) @ 25°C	200 mA	200 mA
Drain to Source Voltage (Vdss)	30 V	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V	2.5 - 4.5 V
FET Type	N-Channel	N-Channel, P-Channel
Gate Charge (Qg) (Max) @ Vgs	0.18 nC	0.18 nC
Input Capacitance (Ciss) (Max) @ Vds	6.5 pF	6.5 - 34 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature	150 °C	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59	SC-70, SOT-323, SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	400 mW	400 mW
Power Dissipation (Max)	-	350 mW
Rds On (Max) @ Id, Vgs	5 Ohm	5 Ohm
Rds On (Max) @ Id, Vgs	-	5 Ohm
Supplier Device Package	SOT-23 (TO-236)	SOT-323-3A, SOT-23 (TO-236)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	8 - 20 V
Vgs(th) (Max) @ Id	1.8 V	1.2 - 1.8 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
Torex Semiconductor Ltd XP231N02013R-G	SOT-323-3A	5 Ohm	2.5 V, 4.5 V	0.18 nC	350 mW	Surface Mount	30 V	1.8 V	150 °C	20 V	200 mA	N-Channel	SC-70, SOT-323	6.5 pF	MOSFET (Metal Oxide)
Torex Semiconductor Ltd XP231N0201TR-G	SOT-23 (TO-236)	5 Ohm	2.5 V, 4.5 V	0.18 nC		Surface Mount	30 V	1.8 V	150 °C	20 V	200 mA	N-Channel	SC-59, SOT-23-3, TO-236-3	6.5 pF	MOSFET (Metal Oxide)	400 mW
Torex Semiconductor Ltd XP231P02013R-G	SOT-323-3A		2.5 V, 4.5 V		350 mW	Surface Mount	30 V	1.2 V	150 °C	8 V	200 mA	P-Channel	SC-70, SOT-323	34 pF	MOSFET (Metal Oxide)		5 Ohm