IXTH64N65X

Obsolete

IXYS

MOSFET N-CH 650V 64A TO247

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Obsolete

IXYS

MOSFET N-CH 650V 64A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH64N65X

Current - Continuous Drain (Id) @ 25°C	64 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	143 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	51 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs
IXYS IXTH64N65X	650 V	5500 pF	TO-247-3	10 V	TO-247 (IXTH)	30 V	Through Hole	5 V	MOSFET (Metal Oxide)	64 A	890 W	-55 °C	150 °C	143 nC	N-Channel	51 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 64A (Tc) 890W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available