APTGFQ25H120T2G

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Microsemi Corporation

IGBT MODULE 1200V 40A 227W SP2

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Microsemi Corporation

IGBT MODULE 1200V 40A 227W SP2

Technical Specifications

Parameters and characteristics for this part

Specification	APTGFQ25H120T2G

Configuration	Full Bridge
Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Cutoff (Max) [Max]	250 µA
IGBT Type	NPT and Fieldstop
Input	Standard
Input Capacitance (Cies) @ Vce	2.02 nF
Mounting Type	Through Hole
NTC Thermistor	True
Package / Case	SP2
Power - Max [Max]	227 W
Supplier Device Package	SP2
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	IGBT Type	Package / Case	Vce(on) (Max) @ Vge, Ic	Input Capacitance (Cies) @ Vce	NTC Thermistor	Configuration	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Input	Power - Max [Max]
Microsemi Corporation APTGFQ25H120T2G	40 A	SP2	NPT and Fieldstop	SP2	2.1 V	2.02 nF		Full Bridge	Through Hole	1200 V	250 µA	Standard	227 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module NPT and Fieldstop Full Bridge 1200 V 40 A 227 W Through Hole SP2

Technical documentation and resources