IXFB120N50P2

Obsolete

IXYS

MOSFET N-CH 500V 120A PLUS264

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Obsolete

IXYS

MOSFET N-CH 500V 120A PLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB120N50P2

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Input Capacitance (Ciss) (Max) @ Vds	19000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	1890 W
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Package / Case
IXYS IXFB120N50P2	300 nC	19000 pF	30 V	43 mOhm	500 V	1890 W	N-Channel	10 V	-55 °C	150 °C	PLUS264™	MOSFET (Metal Oxide)	120 A	Through Hole	5 V	TO-264-3 TO-264AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 120A (Tc) 1890W (Tc) Through Hole PLUS264™

Technical documentation and resources

No documents available