STW13NM50N

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STMicroelectronics

MOSFET N-CH 500V 12A TO247-3

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STMicroelectronics

MOSFET N-CH 500V 12A TO247-3

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General part information

N-Channel 500 V 12A (Tc) 100W (Tc) Through Hole TO-247-3

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	STW13NM50N	STW13N Series

Current - Continuous Drain (Id) @ 25°C	12 A	11 - 12 A
Drain to Source Voltage (Vdss)	500 V	500 - 800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC	17 - 155 nC
Input Capacitance (Ciss) (Max) @ Vds	960 pF	580 - 3480 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	-	90 W
Power Dissipation (Max) [Max]	100 W	100 - 230 W
Rds On (Max) @ Id, Vgs	320 mOhm	320 - 650 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 - 30 V
Vgs(th) (Max) @ Id	4 V	4 - 4.5 V

MOSFET N-CH 500V 12A TO247-3

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)
STMicroelectronics STW13NM50N	12 A	10 V	100 W	25 V	30 nC	4 V	960 pF	Through Hole	500 V	TO-247-3	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	320 mOhm	TO-247-3
STMicroelectronics STW13NM60N	11 A	10 V		25 V	30 nC	4 V	790 pF	Through Hole	600 V	TO-247-3	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	360 mOhm	TO-247-3	90 W
STMicroelectronics STW13N60M2	11 A	10 V	110 W	25 V	17 nC	4 V	580 pF	Through Hole	600 V	TO-247-3	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	380 mOhm	TO-247-3
STMicroelectronics STW13NK80Z	12 A	10 V	230 W	30 V	155 nC	4.5 V	3480 pF	Through Hole	800 V	TO-247-3	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	650 mOhm	TO-247-3