SUP45N03-13L-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 45A TO220AB

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 45A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP45N03-13L-E3

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SUP45N03-13L-E3	45 A	88 W	TO-220AB	3 V	4.5 V 10 V	Through Hole	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-220-3	30 V	13 mOhm	N-Channel	70 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 45A (Tc) 88W (Tc) Through Hole TO-220AB

Technical documentation and resources