WNSC10650WQ

Obsolete

WeEn Semiconductors

DIODE SIL CARB 650V 10A TO247-2

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Obsolete

WeEn Semiconductors

DIODE SIL CARB 650V 10A TO247-2

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	WNSC10650WQ	WNSC1 Series

Capacitance @ Vr, F	328 pF	328 - 510 pF
Current - Average Rectified (Io)	10 A	10 - 12 A
Current - Average Rectified (Io) (per Diode)	-	16 A
Current - Reverse Leakage @ Vr	60 µA	50 - 110 µA
Diode Configuration	-	1 Pair Common Cathode
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature - Junction	175 °C	175 °C
Operating Temperature - Junction	-	175 °C
Package / Case	TO-247-2	TO-247-2, TO-247-3, 4-VSFN Exposed Pad, TO-220-2
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-247-2	TO-247-2, TO-247-3, 5-DFN (8x8), TO-220AC
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	1.2 - 650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V	1.6 - 1.7 V
Voltage - Forward (Vf) (Max) @ If	-	1.8 V

DIODE SIL CARB 650V 10A TO247-2

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Technology	Speed	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]
WeEn Semiconductors WNSC10650WQ	TO-247-2	1.7 V	328 pF	650 V	Through Hole	10 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	60 µA	175 °C
WeEn Semiconductors WNSC16650CWQ	TO-247-3	1.7 V		650 V	Through Hole		SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-3	50 µA	175 °C	1 Pair Common Cathode	16 A
WeEn Semiconductors WNSC12650T6J	5-DFN (8x8)		328 pF	650 V	Surface Mount	12 A	SiC (Silicon Carbide) Schottky	No Recovery Time	4-VSFN Exposed Pad	60 µA	175 °C			1.8 V
WeEn Semiconductors WNSC101200Q	TO-220AC	1.6 V	510 pF	1.2 kV	Through Hole	10 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-220-2	110 µA					175 °C
WeEn Semiconductors WNSC12650WQ	TO-247-2		328 pF	650 V	Through Hole	12 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	60 µA	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 10A Through Hole TO-247-2

Technical documentation and resources

No documents available