Specification	SSM3K318R,LF

Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	7 nC
Input Capacitance (Ciss) (Max)	235 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Package Name	SOT-23F
Power Dissipation (Max)	1 W
Rds On (Max)	0.107 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.8 V

SSM3K318R Series

Part	FET Type	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Package Name	Rds On (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Vgs(th) (Max)	Vgs (Max)	Technology	Package / Case	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)	Operating Temperature
Toshiba Semiconductor and Storage SSM3K318R,LF	N-Channel	2.5 A	1 W	SOT-23F	0.107 Ohm	60 V	7 nC	2.8 V	20 V	MOSFET (Metal Oxide)	SOT-23-3 Flat Leads	Surface Mount	10 V	4.5 V	235 pF	150 °C

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