SSM3K48FU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA USM

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA USM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K48FU,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15.1 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	3.2 Ohm
Supplier Device Package	USM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3K48FU,LF	15.1 pF	SC-70 SOT-323	3.2 Ohm	USM	100 mA	N-Channel	MOSFET (Metal Oxide)	150 mW	Surface Mount	1.5 V	150 °C	20 V	4 V	2.5 V	30 V

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General part information

N-Channel 30 V 100mA (Ta) 150mW (Ta) Surface Mount USM

Technical documentation and resources