PMDPB95XNE2X

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Nexperia USA Inc.

30 V, DUAL N-CHANNEL TRENCH MOSFET

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PMDPB95XNE2X

Active

Nexperia USA Inc.

30 V, DUAL N-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMDPB95 Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB95XNE2X

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	2.7 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	4.5 nC
Input Capacitance (Ciss) (Max)	258 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFDFN Exposed Pad
Package Length	2 mm
Package Name	6-HUSON
Package Width	2 mm
Power - Max (Ta)	510 mW
Rds On (Max)	99 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.25 V

PMDPB95 Series

Part	Mounting Type	Rds On (Max)	Input Capacitance (Ciss) (Max)	Power - Max (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Drain to Source Voltage (Vdss)	Package Length	Package Name	Package Width	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Channel Count	Configuration	Configuration - Features	Vgs(th) (Max)	Technology
Nexperia USA Inc. PMDPB95XNE2X	Surface Mount	99 mOhm	258 pF	510 mW	-55 °C	150 °C	6-UFDFN Exposed Pad	30 V	2 mm	6-HUSON	2 mm	4.5 nC	2.7 A	2	N-Channel	Dual	1.25 V	MOSFET (Metal Oxide)