AOT66616L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 38.5A/140A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 38.5A/140A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT66616L

Current - Continuous Drain (Id) @ 25°C	38.5 A, 140 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W, 8.3 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Alpha & Omega Semiconductor Inc. AOT66616L	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	60 V	TO-220-3	3.2 mOhm	N-Channel	20 V	60 nC	8.3 W 125 W	3.4 V	6 V 10 V	2870 pF	TO-220	38.5 A 140 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 1.39

General part information

N-Channel 60 V 38.5A (Ta), 140A (Tc) 8.3W (Ta), 125W (Tc) Through Hole TO-220

Technical documentation and resources