IPP77N06S212AKSA1

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Infineon Technologies

MOSFET N-CH 55V 77A TO220-3

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Infineon Technologies

MOSFET N-CH 55V 77A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP77N06S212AKSA1

Current - Continuous Drain (Id) @ 25°C	77 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	158 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Technology	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Infineon Technologies IPP77N06S212AKSA1	MOSFET (Metal Oxide)	4 V	10 V	77 A	TO-220-3	158 W	55 V	N-Channel	-55 °C	175 ░C	1770 pF	PG-TO220-3-1	20 V	12 mOhm	60 nC	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 77A (Tc) 158W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources