IXFE80N50

Obsolete

IXYS

MOSFET N-CH 500V 72A SOT-227B

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Obsolete

IXYS

MOSFET N-CH 500V 72A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFE80N50

Current - Continuous Drain (Id) @ 25°C	72 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	380 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9890 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	580 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Technology
IXYS IXFE80N50	150 °C	-40 °C	SOT-227-4 miniBLOC	4.5 V	SOT-227B	72 A	10 V	380 nC	580 W	9890 pF	Chassis Mount	55 mOhm	20 V	500 V	N-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 72A (Tc) 580W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available