IXFR20N100P

Obsolete

IXYS

MOSFET N-CH 1000V 11A ISOPLUS247

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Obsolete

IXYS

MOSFET N-CH 1000V 11A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR20N100P

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	126 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	640 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Mounting Type
IXYS IXFR20N100P	126 nC	640 mOhm	MOSFET (Metal Oxide)	10 V	ISOPLUS247™	7300 pF	TO-247-3	230 W	1000 V	6.5 V	-55 °C	150 °C	11 A	N-Channel	30 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 11A (Tc) 230W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources

No documents available