IXTP230N04T4M

Obsolete

IXYS

MOSFET N-CH 40V 230A TO220

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 40V 230A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP230N04T4M

Current - Continuous Drain (Id) @ 25°C	230 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	2.9 mOhm
Supplier Device Package	TO-220 Isolated Tab
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTP230N04T4M	40 W	MOSFET (Metal Oxide)	140 nC	Through Hole	TO-220 Isolated Tab	10 V	N-Channel	7400 pF	40 V	15 V	230 A	4 V	TO-220-3 Full Pack Isolated Tab	2.9 mOhm	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 230A (Tc) 40W (Tc) Through Hole TO-220 Isolated Tab

Technical documentation and resources

No documents available