1SS250(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC59

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Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 100MA SC59

Technical Specifications

Parameters and characteristics for this part

Specification	1SS250(TE85L,F)

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	125 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	60 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SC-59
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

DIODE GEN PURP 200V 100MA SC59

Part	Technology	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Package / Case	Mounting Type	Operating Temperature - Junction	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage 1SS250(TE85L,F)	Standard	60 ns	3 pF	SC-59, SOT-23-3, TO-236-3	Surface Mount	125 °C	Any Speed	200 mA	200 V	SC-59	100 mA	1 µA

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General part information

Diode 200 V 100mA Surface Mount SC-59

Technical documentation and resources

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