DIODE GEN PURP 200V 100MA SC59
| Part | Technology | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Package / Case | Mounting Type | Operating Temperature - Junction | Speed | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage 1SS250(TE85L,F) | Standard | 60 ns | 3 pF | SC-59, SOT-23-3, TO-236-3 | Surface Mount | 125 °C | Any Speed | 200 mA | 200 V | SC-59 | 100 mA | 1 µA |