APTDC40H1201G

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Microsemi Corporation

BRIDGE RECT 1PHASE 1.2KV 40A SP1

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Microsemi Corporation

BRIDGE RECT 1PHASE 1.2KV 40A SP1

Technical Specifications

Parameters and characteristics for this part

Specification	APTDC40H1201G

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	800 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	SP1
Supplier Device Package	SP1
Technology	Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V
Voltage - Peak Reverse (Max) [Max]	1.2 kV

Part	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Technology	Mounting Type	Diode Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Forward (Vf) (Max) @ If
Microsemi Corporation APTDC40H1201G	800 µA	1.2 kV	40 A	SP1	Silicon Carbide Schottky	Chassis Mount	Single Phase	SP1	-40 C	175 °C	1.8 V
Microsemi Corporation APTDC40H601G	800 µA	600 V	40 A	SP1	Silicon Carbide Schottky	Chassis Mount	Single Phase	SP1	-40 C	175 °C	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bridge Rectifier Single Phase Silicon Carbide Schottky 1.2 kV Chassis Mount SP1

Technical documentation and resources

No documents available