L6386E

Obsolete

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14DIP

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L6386E

Obsolete

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 14DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	L6386E

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	400 mA
Current - Peak Output (Source, Sink) [custom]	650 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	1.5 V, 3.6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Rise / Fall Time (Typ) [custom]	30 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	14-DIP
Voltage - Supply [Max]	17 V

L6386AD Series

HV High and low side driver with embedded comparator and bootstrap diode

Part	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Gate Type	Channel Type	Driven Configuration	Logic Voltage - VIL, VIH	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Voltage - Supply [Max]
STMicroelectronics L6386E	Inverting	400 mA	650 mA	150 °C	-40 °C	2	14-DIP	7.62 mm	0.3 "	Through Hole	IGBT N-Channel MOSFET	Independent	Half-Bridge	1.5 V 3.6 V	14-DIP	30 ns	50 ns	600 V	17 V
STMicroelectronics L6386D	Inverting	400 mA	650 mA	150 °C	-40 °C	2	14-SOIC	3.9 mm	0.154 in	Surface Mount	IGBT MOSFET	Independent	Half-Bridge	1.5 V 3.6 V	14-SO	30 ns	50 ns	600 V	17 V
STMicroelectronics L6386ADTR	Inverting	400 mA	650 mA	150 °C	-40 °C	2	14-SOIC	3.9 mm	0.154 in	Surface Mount	IGBT N-Channel MOSFET	Independent	Half-Bridge	1.5 V 3.6 V	14-SO	30 ns	50 ns	600 V	17 V
STMicroelectronics L6386AD	Inverting	400 mA	650 mA	150 °C	-40 °C	2	14-SOIC	3.9 mm	0.154 in	Surface Mount	IGBT N-Channel MOSFET	Independent	Half-Bridge	1.5 V 3.6 V	14-SO	30 ns	50 ns	600 V	17 V
STMicroelectronics L6386	Inverting	400 mA	650 mA	150 °C	-40 °C	2	14-DIP	7.62 mm	0.3 "	Through Hole	IGBT N-Channel MOSFET	Independent	Half-Bridge	1.5 V 3.6 V	14-DIP	30 ns	50 ns	600 V	17 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

L6386AD Series

The L6386AD is a high voltage gate driver, manufactured with the BCD™ "offline" technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half-bridge configurations.

The L6386AD device provides two input pins, two output pins and an enable pin (SD), and guarantees the outputs switch in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.

The L6386AD integrates a comparator (inverting input internally referenced to 0.5 V) that can be used to protect the device against fault events, like overcurrent. The DIAG output is a diagnostic pin, driven by the comparator, and used to signal a fault event occurrence to the controlling device.

Documents

Technical documentation and resources