US1M R3G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A DO214AC

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	US1M R3G

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Speed	Technology	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Qualification
Taiwan Semiconductor Corporation US1M R3G	1000 V	DO-214AC (SMA)	75 ns	5 µA	Surface Mount	1.7 V	200 mA 500 ns	Standard	10 pF	DO-214AC SMA	1 A	150 °C	-55 °C
Taiwan Semiconductor Corporation US1MH	1000 V	DO-214AC (SMA)	75 ns	5 µA	Surface Mount	1.7 V	200 mA 500 ns	Standard	10 pF	DO-214AC SMA	1 A	150 °C	-55 °C	Automotive	AEC-Q101
Taiwan Semiconductor Corporation US1MHR3G	1000 V	DO-214AC (SMA)	75 ns	5 µA	Surface Mount	1.7 V	200 mA 500 ns	Standard	10 pF	DO-214AC SMA	1 A	150 °C	-55 °C	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources