AON7442

Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 30V 50A 8DFN

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Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 30V 50A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON7442

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	2994 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	8-DFN-EP
Supplier Device Package [x]	3.3
Supplier Device Package [y]	3.3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Alpha & Omega Semiconductor Inc. AON7442	8-PowerWDFN	50 A	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	2.2 V	30 V	3.3	3.3	8-DFN-EP	1.9 mOhm	65 nC	83 W	Surface Mount	4.5 V 10 V	N-Channel	2994 pF
Alpha & Omega Semiconductor Inc. AON7444L
Alpha & Omega Semiconductor Inc. AON7440	8-PowerWDFN	28 A 50 A	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V		30 V	3.3	3.3	8-DFN-EP	2.8 mOhm	75 nC	4.2 W 42 W	Surface Mount	4.5 V 10 V	N-Channel	2820 pF	2.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 50A (Tc) 83W (Tc) Surface Mount 8-DFN-EP (3.3x3.3)

Technical documentation and resources