TSM9N90ECZ C0G

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 900V 9A TO220

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 900V 9A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TSM9N90ECZ C0G

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC
Input Capacitance (Ciss) (Max) @ Vds	2470 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Taiwan Semiconductor Corporation TSM9N90ECZ C0G	-55 °C	150 °C	30 V	900 V	2470 pF	Through Hole	MOSFET (Metal Oxide)	N-Channel	10 V	9 A	4 V	1.4 Ohm	TO-220	TO-220-3	72 nC
Taiwan Semiconductor Corporation TSM9N90ECI C0G	-55 °C	150 °C	30 V	900 V	2470 pF	Through Hole	MOSFET (Metal Oxide)	N-Channel	10 V	9 A	4 V	1.4 Ohm	ITO-220AB	TO-220-3 Full Pack Isolated Tab	72 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 9A (Tc) 89W (Tc) Through Hole TO-220

Technical documentation and resources

No documents available