IPB024N08NF2SATMA1

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Infineon Technologies

MOSFET, N-CH, 80V, 107A, TO-263 ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 80V, 107A, TO-263 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPB024N08NF2SATMA1

Current - Continuous Drain (Id) @ 25°C	107 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	133 nC
Input Capacitance (Ciss) (Max) @ Vds	6200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology
Infineon Technologies IPB024N08NF2SATMA1	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	107 A	20 V	N-Channel	6200 pF	150 W	2.4 mOhm	Surface Mount	-55 °C	175 ░C	133 nC	3.8 V	6 V 10 V	80 V	MOSFET (Metal Oxide)

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General part information

N-Channel 80 V 107A (Tc) 150W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources