BUJ100LR,126

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WeEn Semiconductors

TRANS NPN 400V 1A TO92-3

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WeEn Semiconductors

TRANS NPN 400V 1A TO92-3

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General part information

Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3

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Specification	BUJ100LR,126	BUJ100 Series

Current - Collector (Ic) (Max) [Max]	1 A	1 A
Current - Collector Cutoff (Max) [Max]	1 mA	1 - 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10	9 - 10
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3
Power - Max [Max]	2.1 W	2 - 2.1 W
Supplier Device Package	TO-92-3	TO-92-3
Transistor Type	NPN	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V	1 - 1.5 V
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V

Part	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
WeEn Semiconductors BUJ100LR,412	Through Hole	TO-92-3	400 V	1.5 V	1 A	TO-226-3, TO-92-3	2.1 W	150 °C	1 mA	10	NPN
WeEn Semiconductors BUJ100,412	Through Hole	TO-92-3	400 V	1 V	1 A	TO-226-3, TO-92-3	2 W	150 °C	100 µA	9	NPN
WeEn Semiconductors BUJ100,126	Through Hole	TO-92-3	400 V	1 V	1 A	TO-226-3, TO-92-3	2 W	150 °C	100 µA	9	NPN
WeEn Semiconductors BUJ100LR,126	Through Hole	TO-92-3	400 V	1.5 V	1 A	TO-226-3, TO-92-3	2.1 W	150 °C	1 mA	10	NPN