AUIRF9952QTR

Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

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Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF9952QTR

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.3 A, 3.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	FET Feature	Vgs(th) (Max) @ Id	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Infineon Technologies AUIRF9952QTR	Logic Level Gate	3 V	2 W	2.3 A 3.5 A	30 V	190 pF	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	8-SO	Surface Mount	-55 °C	150 °C	N and P-Channel	14 nC	100 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 3.5A, 2.3A 2W Surface Mount 8-SO

Technical documentation and resources