GD25LD40EK6IGR

Active

GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/DUAL 6USON

Deep-Dive with AI

Search across all available documentation for this part.

GD25LD40EK6IGR

Active

GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/DUAL 6USON

Deep-Dive with AI

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.32
		6000	$ 0.30
		15000	$ 0.29
		30000	$ 0.28

Description

General part information

GD25LD40 Series

FLASH - NOR (SLC) Memory IC 4Mbit SPI - Dual I/O 50 MHz 12 ns 6-USON (1.2x1.2)

Documents

Technical documentation and resources

No documents available

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	GD25LD40EK6IGR	GD25LD40 Series

Access Time	12 ns	12 ns
Clock Frequency	50 MHz	50 MHz
Memory Format	FLASH	FLASH
Memory Interface	SPI - Dual I/O	SPI - Dual I/O
Memory Organization	512 K	512 K
Memory Size	512 kb	512 kb
Memory Type	Non-Volatile	Non-Volatile
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	85 °C	85 °C
Operating Temperature [Min]	-40 °C	-40 °C
Package / Case	6-XFDFN	8-XFDFN Exposed Pad, 8-SOIC, 6-XFDFN
Package / Case	-	3.9 mm
Package / Case	-	0.154 in
Supplier Device Package	6-USON (1.2x1.2)	8-USON (1.5x1.5), 8-SOP, 8-USON (2x3), 8-USON (3x2), 6-USON (1.2x1.2)
Technology	FLASH - NOR (SLC)	FLASH - NOR (SLC), FLASH - NOR
Voltage - Supply [Max]	2 V	2 V
Voltage - Supply [Min]	1.65 V	1.65 V
Write Cycle Time - Word, Page [custom]	6 ms	6 ms
Write Cycle Time - Word, Page [custom]	100 µs	97 - 100 µs

GD25LD40 Series

IC FLASH 4MBIT SPI/DUAL 8USON

Part	Memory Format	Clock Frequency	Supplier Device Package	Access Time	Memory Interface	Memory Type	Memory Organization	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Mounting Type	Memory Size	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25LD40EKIGR	FLASH	50 MHz	8-USON (1.5x1.5)	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	100 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	8-XFDFN Exposed Pad	2 V	1.65 V
GigaDevice Semiconductor (HK) Limited GD25LD40CKIGR	FLASH	50 MHz	8-USON (1.5x1.5)	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	97 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	8-XFDFN Exposed Pad	2 V	1.65 V
GigaDevice Semiconductor (HK) Limited GD25LD40CTIGR	FLASH	50 MHz	8-SOP		SPI - Dual I/O	Non-Volatile	512 K	6 ms	97 µs	Surface Mount	512 kb	FLASH - NOR	85 °C	-40 °C	8-SOIC	2 V	1.65 V	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LD40ETIGR	FLASH	50 MHz	8-SOP	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	100 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	8-SOIC	2 V	1.65 V	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LD40CEIGR	FLASH	50 MHz	8-USON (2x3)		SPI - Dual I/O	Non-Volatile	512 K	6 ms	97 µs	Surface Mount	512 kb	FLASH - NOR	85 °C	-40 °C	8-XFDFN Exposed Pad	2 V	1.65 V
GigaDevice Semiconductor (HK) Limited GD25LD40EEIGR	FLASH	50 MHz	8-USON (3x2)	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	100 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	8-XFDFN Exposed Pad	2 V	1.65 V
GigaDevice Semiconductor (HK) Limited GD25LD40EK6IGR	FLASH	50 MHz	6-USON (1.2x1.2)	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	100 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	6-XFDFN	2 V	1.65 V