GD25LD40 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 4MBIT SPI/DUAL 8USON

Part	Memory Format	Clock Frequency	Supplier Device Package	Access Time	Memory Interface	Memory Type	Memory Organization	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Mounting Type	Memory Size	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25LD40EKIGR	FLASH	50 MHz	8-USON (1.5x1.5)	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	100 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	8-XFDFN Exposed Pad	2 V	1.65 V
GigaDevice Semiconductor (HK) Limited GD25LD40CKIGR	FLASH	50 MHz	8-USON (1.5x1.5)	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	97 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	8-XFDFN Exposed Pad	2 V	1.65 V
GigaDevice Semiconductor (HK) Limited GD25LD40CTIGR	FLASH	50 MHz	8-SOP		SPI - Dual I/O	Non-Volatile	512 K	6 ms	97 µs	Surface Mount	512 kb	FLASH - NOR	85 °C	-40 °C	8-SOIC	2 V	1.65 V	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LD40ETIGR	FLASH	50 MHz	8-SOP	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	100 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	8-SOIC	2 V	1.65 V	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LD40CEIGR	FLASH	50 MHz	8-USON (2x3)		SPI - Dual I/O	Non-Volatile	512 K	6 ms	97 µs	Surface Mount	512 kb	FLASH - NOR	85 °C	-40 °C	8-XFDFN Exposed Pad	2 V	1.65 V
GigaDevice Semiconductor (HK) Limited GD25LD40EEIGR	FLASH	50 MHz	8-USON (3x2)	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	100 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	8-XFDFN Exposed Pad	2 V	1.65 V
GigaDevice Semiconductor (HK) Limited GD25LD40EK6IGR	FLASH	50 MHz	6-USON (1.2x1.2)	12 ns	SPI - Dual I/O	Non-Volatile	512 K	6 ms	100 µs	Surface Mount	512 kb	FLASH - NOR (SLC)	85 °C	-40 °C	6-XFDFN	2 V	1.65 V