STFU6N65

Obsolete

STMicroelectronics

MOSFET N-CH 650V 4A TO220FP

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Obsolete

STMicroelectronics

MOSFET N-CH 650V 4A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STFU6N65

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	463 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	77 W, 620 mW
Rds On (Max) @ Id, Vgs	2.7 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type
STMicroelectronics STFU6N65	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	650 V	77 W 620 mW	N-Channel	2.7 Ohm	4 A	30 V	TO-220-3 Full Pack	TO-220FP	463 pF	4 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 4A (Tc) 620mW (Ta), 77W (Tc) Through Hole TO-220FP

Technical documentation and resources

No documents available