CMSBN6601-HF

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Comchip Technology

MOSFET 2N-CH 20V 13A 6CSP

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Comchip Technology

MOSFET 2N-CH 20V 13A 6CSP

Technical Specifications

Parameters and characteristics for this part

Specification	CMSBN6601-HF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	25.4 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, No Lead
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	11.5 mOhm
Supplier Device Package	CSPB2718-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

MOSFET 2N-CH 20V 13A 6CSP

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power - Max [Max]	Configuration	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Comchip Technology CMSBN6601-HF	25.4 nC	6-SMD, No Lead	11.5 mOhm	CSPB2718-6	MOSFET (Metal Oxide)	150 °C	13 A	Surface Mount	2 W	2 N-Channel (Dual)	1.3 V	20 V

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General part information

Mosfet Array 20V 13A (Ta) 2W (Ta) Surface Mount CSPB2718-6

Technical documentation and resources

No documents available