IRGB4B60KPBF

Obsolete

Infineon Technologies

IGBT 600V 12A 63W TO220A

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT 600V 12A 63W TO220A

Technical Specifications

Parameters and characteristics for this part

Specification	IRGB4B60KPBF

Current - Collector (Ic) (Max) [Max]	12 A
Gate Charge	12 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	63 W
Supplier Device Package	TO-220AB
Switching Energy	83 µJ, 130 µJ
Td (on/off) @ 25°C	22 ns, 100 ns
Test Condition [custom]	15 V, 400 V
Test Condition [custom]	100 Ohm
Test Condition [custom]	4 A
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Supplier Device Package	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	Mounting Type	Package / Case	IGBT Type	Switching Energy	Current - Collector (Ic) (Max) [Max]	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)
Infineon Technologies IRGB4B60KPBF	-55 °C	175 ░C	600 V	22 ns 100 ns	TO-220AB	63 W	2.5 V	12 nC	Through Hole	TO-220-3	NPT	83 µJ 130 µJ	12 A	15 V 400 V	100 Ohm	4 A
Infineon Technologies IRGB4B60KD1PBF	-55 °C	175 ░C	600 V	22 ns 100 ns	TO-220AB	63 W	2.5 V	12 nC	Through Hole	TO-220-3	NPT	47 µJ 73 µJ	11 A	15 V 400 V	100 Ohm	4 A	93 ns	22 A
Infineon Technologies IRGB4B60KD1PBF	-55 °C	175 ░C	600 V	22 ns 100 ns	TO-220AB	63 W	2.5 V	12 nC	Through Hole	TO-220-3	NPT	47 µJ 73 µJ	11 A	15 V 400 V	100 Ohm	4 A	93 ns	22 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 12 A 63 W Through Hole TO-220AB

Technical documentation and resources

No documents available