IXFH80N06

Obsolete

IXYS

MOSFET N-CH 60V 80A TO247AD

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 60V 80A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH80N06

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Power Dissipation (Max)
IXYS IXFH80N10	Through Hole	-55 °C	150 °C	4 V	N-Channel	4800 pF	12.5 mOhm	20 V	300 W	100 V	TO-247-3	10 V	180 nC	TO-247AD (IXFH)	MOSFET (Metal Oxide)
IXYS IXFH80N06	Through Hole				N-Channel			20 V		60 V	TO-247-3	10 V		TO-247AD (IXFH)	MOSFET (Metal Oxide)
IXYS IXFH80N20Q	Through Hole	-55 °C	150 °C	4 V	N-Channel	4600 pF	28 mOhm	20 V		200 V	TO-247-3	10 V	180 nC	TO-247AD (IXFH)	MOSFET (Metal Oxide)	360 W
IXYS IXFH80N15Q	Through Hole	-55 °C	150 °C	4 V	N-Channel	4500 pF	22.5 mOhm	20 V		150 V	TO-247-3	10 V	180 nC	TO-247AD (IXFH)	MOSFET (Metal Oxide)	360 W
IXYS IXFH80N30P3
IXYS IXFH80N10Q	Through Hole	-55 °C	150 °C	4 V	N-Channel	4500 pF	15 mOhm	20 V		100 V	TO-247-3	10 V	180 nC	TO-247AD (IXFH)	MOSFET (Metal Oxide)	360 W
IXYS IXFH80N08	Through Hole	-55 °C	150 °C	4 V	N-Channel	4800 pF	9 mOhm	20 V	300 W	80 V	TO-247-3	10 V	180 nC	TO-247AD (IXFH)	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 80A (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

No documents available