STL19N60DM2

Obsolete

STMicroelectronics

MOSFET N-CH 600V 11A PWRFLAT HV

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STL19N60DM2

Obsolete

STMicroelectronics

MOSFET N-CH 600V 11A PWRFLAT HV

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL19N60DM2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	320 mOhm
Supplier Device Package	PowerFlat™ (8x8) HV
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STL19N60M6 Series

N-channel 600 V, 255 mOhm typ., 11 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STL19N60DM2	PowerFlat™ (8x8) HV	11 A	320 mOhm	-55 °C	150 °C	10 V	90 W	8-PowerVDFN	Surface Mount	600 V	25 V	MOSFET (Metal Oxide)	21 nC	5 V	N-Channel
STMicroelectronics STL19N60M6	PowerFlat™ (8x8) HV	11 A	308 mOhm	-55 °C	150 °C	10 V	90 W	8-PowerVDFN	Surface Mount	600 V	25 V	MOSFET (Metal Oxide)		4.75 V	N-Channel	16.8 nC	650 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.35
		10	$ 2.81
	Tape & Reel (TR)	3000	$ 1.02
		6000	$ 0.98
		9000	$ 0.95

Description

General part information

STL19N60M6 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources