BCR 133T E6327

Obsolete

Infineon Technologies

TRANS PREBIAS NPN 50V 0.1A SC75

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Obsolete

Infineon Technologies

TRANS PREBIAS NPN 50V 0.1A SC75

Technical Specifications

Parameters and characteristics for this part

Specification	BCR 133T E6327

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Power - Max [Max]	250 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	PG-SC75-3D
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Mounting Type	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Frequency - Transition
Infineon Technologies BCR 133T E6327	NPN - Pre-Biased	PG-SC75-3D	100 mA	Surface Mount	10 kOhms	100 nA	10 kOhms	300 mV	50 V	250 mW	30 hFE	SC-75 SOT-416	130 MHz
Infineon Technologies BCR 133 B6327	NPN - Pre-Biased	PG-SOT23	100 mA	Surface Mount	10 kOhms	100 nA	10 kOhms	300 mV	50 V	200 mW	30 hFE	SC-59 SOT-23-3 TO-236-3	130 MHz
Infineon Technologies BCR 133F E6327	NPN - Pre-Biased	PG-TSFP-3	100 mA	Surface Mount	10 kOhms	100 nA	10 kOhms	300 mV	50 V	250 mW	30 hFE	SOT-723	130 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 130 MHz 250 mW Surface Mount PG-SC75-3D

Technical documentation and resources