JANTXV2N5667
Active300V 5A 1.2W NPN POWER BJT THT TO-5 ROHS COMPLIANT: YES
JANTXV2N5667
Active300V 5A 1.2W NPN POWER BJT THT TO-5 ROHS COMPLIANT: YES
Description
General part information
JANTXV2N5667-Transistor Series
This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N5667 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) | 200 nA |
| DC Current Gain (hFE) (Min) | 25 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-5-3 Metal Can, TO-205AA |
| Package Name | TO-5 |
| Power - Max | 1.2 VA |
| Qualification | MIL-PRF-19500, 455 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
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