TSM2301ACX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 2.8A SOT23

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Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 2.8A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2301ACX RFG

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
Taiwan Semiconductor Corporation TSM2301ACX RFG	Surface Mount	-55 °C	150 °C	P-Channel	2.8 A	MOSFET (Metal Oxide)	480 pF	SC-59 SOT-23-3 TO-236-3	1 V	20 V	130 mOhm	SOT-23	700 mW	2.5 V 4.5 V	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2.8A (Tc) 700mW (Ta) Surface Mount SOT-23

Technical documentation and resources