Zenode.ai Logo
ISL6615A Functional Diagram

ISL6615AIRZ

Obsolete
Renesas Electronics Corporation

HIGH-FREQUENCY 6A SINK SYNCHRONOUS MOSFET DRIVERS WITH PROTECTION FEATURES

Find alt
ISL6615A Functional Diagram

ISL6615AIRZ

Obsolete
Renesas Electronics Corporation

HIGH-FREQUENCY 6A SINK SYNCHRONOUS MOSFET DRIVERS WITH PROTECTION FEATURES

Find alt

Description

General part information

ISL6615A Series

The ISL6615A is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator. The ISL6615A drives both upper and lower gates over a range of 4. 5V to 13. 2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. The ISL6615A features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead-time. The ISL6615A includes an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the load if the upper MOSFET(s) is shorted. The ISL6615A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage.

Technical Specifications

Parameters and characteristics for this part

SpecificationISL6615AIRZ
Channel TypeSynchronous
Current - Peak Output (Sink)4 A
Current - Peak Output (Source)2.5 A
Driven ConfigurationHalf-Bridge
Fall Time (Typ)10 ns
Gate ChannelN-Channel
Gate TypeMOSFET
High Side Voltage - Max (Bootstrap)36 V
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / Case10-VFDFN Exposed Pad
Package Length3 mm
Package Name10-DFN
Package Width3 mm
Rise Time (Typ)13 ns
Voltage - Supply (Maximum)13.2 V
Voltage - Supply (Minimum)6.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources