BCP5216E6327HTSA1

Obsolete

Infineon Technologies

TRANS PNP 60V 1A SOT223-4

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Obsolete

Infineon Technologies

TRANS PNP 60V 1A SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BCP5216E6327HTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	125 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	PG-SOT223-4-10
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Frequency - Transition	Supplier Device Package	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]
Infineon Technologies BCP5216E6327HTSA1	125 MHz	PG-SOT223-4-10	TO-261-4 TO-261AA	2 W	500 mV	Surface Mount	PNP	100	1 A	150 °C	60 V	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 60 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-10

Technical documentation and resources