RN1441ATE85LF

Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 20V 0.3A SMINI

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Obsolete

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 20V 0.3A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	RN1441ATE85LF

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	30 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	5.6 kOhms
Supplier Device Package	S-Mini
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic [Max]	100 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	Package / Case	Transistor Type	Resistor - Base (R1)	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Frequency - Transition
Toshiba Semiconductor and Storage RN1441ATE85LF	100 nA	Surface Mount	100 mV	SC-59 SOT-23-3 TO-236-3	NPN - Pre-Biased	5.6 kOhms	S-Mini	200 mW	200	20 V	300 mA	30 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20 V 300 mA 30 MHz 200 mW Surface Mount S-Mini

Technical documentation and resources

No documents available