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JAN2N5581

JAN2N5581

Active
Microchip Technology

SMALL-SIGNAL BJT TO-46 ROHS COMPLIANT: YES

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JAN2N5581

JAN2N5581

Active
Microchip Technology

SMALL-SIGNAL BJT TO-46 ROHS COMPLIANT: YES

Find alt

Description

General part information

JAN2N5581-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching 2N5581 and 2N5582 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/423.

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN2N5581
Current - Collector (Ic) (Max)800 mA
Current - Collector Cutoff (Max)10 µA
DC Current Gain (hFE) (Min)40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-46-3 Metal Can, TO-206AB
Package NameTO-46 (TO-206AB)
Power - Max0.5 W
QualificationMIL-PRF-19500, 423
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

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Documents

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