YQ3RSM10SDTL1
ActiveTRENCH MOS STRUCTURE, 100V, 3A, TO-277GE, HIGHLY EFFICIENT SBD
YQ3RSM10SDTL1
ActiveTRENCH MOS STRUCTURE, 100V, 3A, TO-277GE, HIGHLY EFFICIENT SBD
Description
General part information
YQ3RSM10SD Series
The YQ3RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | YQ3RSM10SDTL1 |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage | 30 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Package Name | TO-277A |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 640 mV |
Pricing
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