BUK9K20-80EX

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Nexperia USA Inc.

MOSFETS DUAL N-CHANNEL 80 V, 22 MOHM LOGIC LEVEL MOSFET

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BUK9K20-80EX

Active

Nexperia USA Inc.

MOSFETS DUAL N-CHANNEL 80 V, 22 MOHM LOGIC LEVEL MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9K20-80E Series

Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9K20-80EX

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	23 A
Drain to Source Voltage (Vdss)	80 V
FET Feature	Logic Level Gate
Gate Charge (Max)	25.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3462 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Package Name	LFPAK56D
Power - Max	68 VA
Qualification	AEC-Q101
Rds On (Max)	17 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.1 V

BUK9K20-80E Series

Dual N-channel 80 V, 20 mΩ logic level MOSFET

Part	Grade	Gate Charge (Max)	Mounting Type	FET Feature	Package / Case	Channel Count	Configuration	Configuration - Features	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Technology	Power - Max	Rds On (Max)	Qualification	Vgs(th) (Max)	Package Name	Drain to Source Voltage (Vdss)
Nexperia USA Inc. BUK9K20-80EX	Automotive	25.5 nC	Surface Mount	Logic Level Gate	8-LFPAK56 SOT-1205	2	N-Channel	Dual	-55 °C	175 °C	23 A	3462 pF	MOSFET (Metal Oxide)	68 VA	17 mOhm	AEC-Q101	2.1 V	LFPAK56D	80 V