PSMN8R5-40HSX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 8.5 MOHM, STANDARD LEVEL MOSFET IN LFPAK56D USING TRENCHMOS TECHNOLOGY
PSMN8R5-40HSX
ActiveNexperia USA Inc.
N-CHANNEL 40 V, 8.5 MOHM, STANDARD LEVEL MOSFET IN LFPAK56D USING TRENCHMOS TECHNOLOGY
Description
General part information
PSMN8R5-40HS Series
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN8R5-40HSX |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 30 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Max) | 21.8 nC |
| Input Capacitance (Ciss) (Max) | 1439 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-LFPAK56, SOT-1205 |
| Package Name | LFPAK56D |
| Power - Max (Ta) | 53 W |
| Rds On (Max) | 8.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Nexperia package poster
plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body
Wave soldering profile
plastic, single ended surface mounted package (LFPAK56D); 8 leads
Foster model PSMN8R5-40HS
PSMN8R5-40HS Quality document
Half-bridge MOSFET switching and its impact on EMC
Cauer model PSMN8R5-40HS
Reliability Information T6-SOT1205
LFPAK MOSFET thermal design guide
Power MOSFET single-shot and repetitive avalanche ruggedness rating
LFPAK56D; Reel pack for SMD, 7''; Q1/T1 product orientation
Reflow soldering profile
Using power MOSFETs in DC motor control applications