PSMN2R8-25MLC,115

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MOSFETS N-CHANNEL 40 V, 2.8 MOHM, 160 A STANDARD LEVEL MOSFET IN LFPAK56 USING OPTIMIZEDNEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY

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PSMN2R8-25MLC,115

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Nexperia USA Inc.

MOSFETS N-CHANNEL 40 V, 2.8 MOHM, 160 A STANDARD LEVEL MOSFET IN LFPAK56 USING OPTIMIZEDNEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN2R8-25MLC Series

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R8-25MLC,115

Current - Continuous Drain (Id) (Tc)	70 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	37.7 nC, 37.7 nC
Input Capacitance (Ciss) (Max)	2432 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-LFPAK33 (5-Lead), SOT-1210
Package Name	LFPAK33
Power Dissipation (Max)	88 W
Rds On (Max)	2.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.15 V

PSMN2R8-25MLC Series

N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

Part	Vgs(th) (Max)	Package Name	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Mounting Type	Technology	Gate Charge (Max)
Nexperia USA Inc. PSMN2R8-25MLC,115	2.15 V	LFPAK33	2.8 mOhm	-55 °C	175 °C	70 A	10 V	4.5 V	25 V	N-Channel	8-LFPAK33 (5-Lead) SOT-1210	88 W	2432 pF	20 V	Surface Mount	MOSFET (Metal Oxide)	37.7 nC 37.7 nC