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Description

General part information

PMV240SP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV240SPR
Current - Continuous Drain (Id) (Ta)1.2 A
Drain to Source Voltage (Vdss)100 V
FET TypeP-Channel
Gate Charge (Max)15 nC
Input Capacitance (Ciss) (Max)549 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power Dissipation (Max)710 mW, 8.3 W
Rds On (Max)365 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part