Description
General part information
CY7C1021DV33 Series
CY7C1021DV33-10ZSXIT is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking chip enable (active-low CE) and write enable (active-low WE) inputs LOW. Reading from the device is accomplished by taking chip enable (active-low CE) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), the active-low BHE and active-low BLE are disabled (active-low BHE, active-low BLE HIGH), or during a write operation (active-low CE LOW, and active-low WE LOW).
Technical Specifications
Parameters and characteristics for this part
| Specification | CY7C1021DV33-10ZSXIT |
|---|---|
| Access Time | 10 ns |
| Memory Depth | 64 K |
| Memory Format | SRAM |
| Memory Interface (Type) | Parallel |
| Memory Size | 1 Mbit |
| Memory Type | Volatile |
| Memory Width | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 10.16 mm |
| Package Name | 44-TSOP, 44-TSOP II |
| Package Width | 10.16 mm |
| Technology | SRAM - Asynchronous |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 3 V |
| Write Cycle Time - Page | 10 ns |
| Write Cycle Time - Word | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
