
TB100ML
ActiveWeEn Semiconductors
RF BIPOLAR TRANSISTORS TB100/TO-92/STANDARD MARKING *

TB100ML
ActiveWeEn Semiconductors
RF BIPOLAR TRANSISTORS TB100/TO-92/STANDARD MARKING *
Description
General part information
TB100 Series
Bipolar (BJT) Transistor NPN 700 V 1 A 2 W Through Hole TO-92-3
Technical Specifications
Parameters and characteristics for this part
| Specification | TB100ML |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 14 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-92-3 (TO-226AA) Formed Leads, TO-226-3 |
| Package Name | TO-92-3 |
| Power - Max | 2 VA |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1 V, 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
Pricing
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CAD
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