NX3020NAKW,115

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Nexperia USA Inc.

TRANS MOSFET N-CH 30V 0.18A 3-PIN SC-70 T/R

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NX3020NAKW,115

Active

Nexperia USA Inc.

TRANS MOSFET N-CH 30V 0.18A 3-PIN SC-70 T/R

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Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

NX3020NAKW Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	NX3020NAKW,115

Current - Continuous Drain (Id) (Ta)	180 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.44 nC
Input Capacitance (Ciss) (Max)	13 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-70, SOT-323
Package Name	SOT-323
Power Dissipation (Max)	260 mW, 1.1 W
Rds On (Max)	4.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.5 V

NX3020NAKW Series

30 V, 180 mA N-channel Trench MOSFET

Part	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Rds On (Max)	Package Name	Input Capacitance (Ciss) (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Gate Charge (Max)	Vgs (Max)	Technology	FET Type
Nexperia USA Inc. NX3020NAKW,115	180 mA	30 V	4.5 Ohm	SOT-323	13 pF	Surface Mount	10 V	2.5 V	SC-70 SOT-323	1.1 W 260 mW	-55 °C	150 °C	1.5 V	0.44 nC	20 V	MOSFET (Metal Oxide)	N-Channel