BAT15099RE6327HTSA1

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INFINEON

RF SCHOTTKY DIODE, DUAL PAIR SERIES, 4 V, 110 MA, 410 MV, 0.29 PF, SOT-143

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BAT15099RE6327HTSA1

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INFINEON

RF SCHOTTKY DIODE, DUAL PAIR SERIES, 4 V, 110 MA, 410 MV, 0.29 PF, SOT-143

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Description Specifications Series Pricing CAD Documents

Description

General part information

BAT15099 Series

This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz.

Technical Specifications

Parameters and characteristics for this part

Specification	BAT15099RE6327HTSA1

Capacitance	0.5 pF
Current - Max	110 mA
Diode Type	Cross Over, Schottky
Operating Temperature	150 °C
Package / Case	TO-253AA, TO-253-4
Package Name	PG-SOT-143-3D
Power Dissipation (Max)	100 mW
Voltage - Peak Reverse (Max)	4 V

BAT15099 Series

Part	Voltage - Peak Reverse (Max)	Operating Temperature	Capacitance	Current - Max	Package Name	Package / Case	Independent Diode Count	Diode Type	Power Dissipation (Max)
INFINEON BAT15099E6433HTMA1	4 V	150 °C	0.35 pF	110 mA	PG-SOT-143-3D	TO-253-4 TO-253AA	2	Schottky	100 mW
INFINEON BAT15099RE6327HTSA1	4 V	150 °C	0.5 pF	110 mA	PG-SOT-143-3D	TO-253-4 TO-253AA		Cross Over Schottky	100 mW
INFINEON BAT15099E6327HTSA1	4 V	150 °C	0.35 pF	110 mA	PG-SOT-143-3D	TO-253-4 TO-253AA	2	Schottky	100 mW

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

BAT15099RE6327HTSA1 | Datasheet